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2SK2166-01R |
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| Part Number | 2SK2166-01R |
| Manufacturer | Fuji Electric |
| Description | 2SK2166-01R FAP-IIIA Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode N-channel MOS-FE... |
| Features |
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode
N-channel MOS-FET
60V
0,03Ω
40A
80W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC Converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D... |
| Document |
 2SK2166-01R Data Sheet
PDF 176.22KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK216 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 2 | 2SK216 |
Renesas Technology |
N-Channel MOSFET |
|
| 3 | 2SK2160 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 4 | 2SK2161 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 5 | 2SK2162 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor |
|