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2SK2162 |
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| Part Number | 2SK2162 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Y... |
| Features |
iewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1 2006-11-21
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current Drain-source breakdown voltage Gate-source cutoff current Drain-source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer... |
| Document |
 2SK2162 Data Sheet
PDF 120.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK216 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 2 | 2SK216 |
Renesas Technology |
N-Channel MOSFET |
|
| 3 | 2SK2160 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 4 | 2SK2161 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 5 | 2SK2165-01 |
Fuji Electric |
N-channel MOS-FET |
|