and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature -55...+150 Rev. 2.4 2005-08-24 Free Datasheet http://www.datasheet4u.net/ SPP11N80C3 SPA11N80C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 640 V, ID = 11 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 3) Electrical Ch.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 11N80 |
UNISONIC TECHNOLOGIES |
N-CHANNEL MOSFET | |
2 | 11N80-C |
UTC |
N-CHANNEL MOSFET | |
3 | 11N80-FL |
UTC |
N-CHANNEL POWER MOSFET | |
4 | 11N06LT |
NXP Semiconductors |
PHB11N06LT | |
5 | 11N120CN |
Fairchild Semiconductor |
HGTG11N120CN | |
6 | 11N3L |
STMicroelectronics |
N-channel Power MOSFET | |
7 | 11N40C |
Fairchild Semiconductor |
FQP11N40C | |
8 | 11N4LLF5 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | 11N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
10 | 11N50-CB |
UTC |
N-CHANNEL MOSFET | |
11 | 11N50E |
Philips |
PowerMOS transistors | |
12 | 11N50K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |