11N80-C - UTC

11N80-C N-CHANNEL MOSFET

The UTC 11N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 0.9 Ω @ VGS=10V, ID=5.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SY.

Features

* RDS(ON) ≤ 0.9 Ω @ VGS=10V, ID=5.5A
* Low Reverse Transfer Capacitance
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
 SYMBOL 2.Drain 1 1 1 Power MOSFET TO-3P TO-220F1 TO-220F2 1.Gate 3.Source
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11N80L-TF1-T 11N80G-TF1-T 11N80L-TF2-T 11N80G-TF2-T 11N80L-T3P-T 11N80G-T3P-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-3P Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube 11N80G-TF1-T (1)Packing Type (2)Package Type (3)Green .