11N3L - STMicroelectronics

11N3L N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(1, 2, 3) Order code STL11N3LLH6 1234 AM15810v1 Table 1: Device summary Marking Package 11N3L PowerFLATTM 3.3x3.3 Packing Tape and reel February 2017 DocID1775.

Features

Order code STL11N3LLH6 VDS 30 V RDS(on) max 7.5 mΩ ID 11 A
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss Applications
 Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(1, 2, 3) Order code STL11N3LLH6 1234 AM15810v1 Table 1: Device summary Marking Package 11N3L PowerFLATTM 3.3x3.3 Packing Tape and reel February 2017 DocID17755 Rev 3 This is inform.