N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHW11N50E is supplied in the SOT429 (TO247) conventional leaded package. The PHB11N50E is supplied in th.
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHB11N50E, PHW11N50E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 500 V
g
ID = 10.9 A RDS(ON) ≤ 0.55 Ω
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHW11N50E is supplied in the SOT429 (TO247) conventional leaded package. The PHB1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 11N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
2 | 11N50-CB |
UTC |
N-CHANNEL MOSFET | |
3 | 11N50K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
4 | 11N06LT |
NXP Semiconductors |
PHB11N06LT | |
5 | 11N120CN |
Fairchild Semiconductor |
HGTG11N120CN | |
6 | 11N3L |
STMicroelectronics |
N-channel Power MOSFET | |
7 | 11N40C |
Fairchild Semiconductor |
FQP11N40C | |
8 | 11N4LLF5 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | 11N60 |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | 11N60C2 |
Infineon |
Power Transistor | |
11 | 11N60C3 |
Infineon Technologies |
Power Transistor | |
12 | 11N60E |
Fuji Electric |
FMV11N60E |