The UTC 11N80-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. FEATURES * .
* RDS(ON) ≤ 0.92 Ω @ VGS=10V, ID=5.5A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11N80L-TF1-T
11N80G-TF1-T
11N80L-TF2-T
11N80G-TF2-T
11N80L-TF3-T
11N80G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1 TO-220F2 TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube Tube Tube
MARKING
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QW-R502-C82.A
11N80-FL
Power MOSFET
A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 11N80-C |
UTC |
N-CHANNEL MOSFET | |
2 | 11N80 |
UNISONIC TECHNOLOGIES |
N-CHANNEL MOSFET | |
3 | 11N80C3 |
Infineon |
Power Transistor | |
4 | 11N06LT |
NXP Semiconductors |
PHB11N06LT | |
5 | 11N120CN |
Fairchild Semiconductor |
HGTG11N120CN | |
6 | 11N3L |
STMicroelectronics |
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7 | 11N40C |
Fairchild Semiconductor |
FQP11N40C | |
8 | 11N4LLF5 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | 11N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
10 | 11N50-CB |
UTC |
N-CHANNEL MOSFET | |
11 | 11N50E |
Philips |
PowerMOS transistors | |
12 | 11N50K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |