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The UTC 11N50-CB is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N50-CB is universally applied in electronic lamp ballasts based on half br.
* RDS(ON) < 0.55Ω @ VGS = 10 V, ID = 5.5 A
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
11N50L-TF1-T
11N50G-TF1-T
TO-220F1
11N50L-TF2-T
11N50G-TF2-T
TO-220F2
11N50L-TF3-T
11N50G-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123 GDS GDS GDS
Packing
Tube Tube Tube
MARKING
www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R205-228 .a
11N50-CB
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 11N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 2 | 11N50E |
Philips |
PowerMOS transistors |
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| 3 | 11N50K-MT |
Unisonic Technologies |
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| 4 | 11N06LT |
NXP Semiconductors |
PHB11N06LT |
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| 5 | 11N120CN |
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| 6 | 11N3L |
STMicroelectronics |
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| 7 | 11N40C |
Fairchild Semiconductor |
FQP11N40C |
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| 8 | 11N4LLF5 |
STMicroelectronics |
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|
| 9 | 11N60 |
Fairchild Semiconductor |
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|
| 10 | 11N60C2 |
Infineon |
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|
| 11 | 11N60C3 |
Infineon Technologies |
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| 12 | 11N60E |
Fuji Electric |
FMV11N60E |
|