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The UTC 11N50 is an N-channel enhancement mode Power FET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N50 is universally applied in electronic lamp ballasts based on half bridge top.
* Low Gate Charge: 43nC (TYP.)
* 11A, 500V, RDS(ON)=0.55Ω @ VGS=10V
* Fast Switching
* Low CRSS: 25pF (TYP.)
* With 100% Avalanche Tested
* Improved dv/dt Capability
* Fast Recovery Body Diode: 90ns (TYP.)
SYMBOL
D
G S
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 11N50L- TF1-T 11N50G-TF1-T Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube
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www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R502-462.a
11N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltag.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 11N50-CB |
UTC |
N-CHANNEL MOSFET |
|
| 2 | 11N50E |
Philips |
PowerMOS transistors |
|
| 3 | 11N50K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 4 | 11N06LT |
NXP Semiconductors |
PHB11N06LT |
|
| 5 | 11N120CN |
Fairchild Semiconductor |
HGTG11N120CN |
|
| 6 | 11N3L |
STMicroelectronics |
N-channel Power MOSFET |
|
| 7 | 11N40C |
Fairchild Semiconductor |
FQP11N40C |
|
| 8 | 11N4LLF5 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 9 | 11N60 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 10 | 11N60C2 |
Infineon |
Power Transistor |
|
| 11 | 11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 12 | 11N60E |
Fuji Electric |
FMV11N60E |
|