This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. PowerFLAT™ 3.3x3.3 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STL11N4LLF5 11N4LLF5 Pac.
Order code STL11N4LLF5
VDS 40 V
RDS(on) max 9.7 mΩ
ID 15 A
■ Low gate charge
■ Very low on-resistance
■ High avalance ruggedeness
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.
PowerFLAT™ 3.3x3.3 Figure 1. Internal schematic diagram
Table 1. Device summary Order code
Marking
STL11N4LLF5
11N4LLF5
Package PowerFLAT™ 3.3 x 3.3
Packaging Tape and reel
F.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 11N40C |
Fairchild Semiconductor |
FQP11N40C | |
2 | 11N06LT |
NXP Semiconductors |
PHB11N06LT | |
3 | 11N120CN |
Fairchild Semiconductor |
HGTG11N120CN | |
4 | 11N3L |
STMicroelectronics |
N-channel Power MOSFET | |
5 | 11N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
6 | 11N50-CB |
UTC |
N-CHANNEL MOSFET | |
7 | 11N50E |
Philips |
PowerMOS transistors | |
8 | 11N50K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
9 | 11N60 |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | 11N60C2 |
Infineon |
Power Transistor | |
11 | 11N60C3 |
Infineon Technologies |
Power Transistor | |
12 | 11N60E |
Fuji Electric |
FMV11N60E |