11N06LT - NXP Semiconductors

11N06LT PHB11N06LT

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHB11N06LT is supplied in the SOT404 surface mounting package. The PHD11N06LT is supplied in the SOT4.

Features

• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics www.DataSheet4U.com
• High thermal cycling performance
• Low thermal resistance PHB11N06LT, PHD11N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 11 A g s RDS(ON) ≤ 150 mΩ (VGS = 5 V) RDS(ON) ≤ 130 mΩ (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching application.