SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche ene.
• 650V @Tj = 150°C
• Typ. Rds(on)=0.32Ω
• Ultra low gate charge (typ. Qg=40nC)
• Low effective output capacitance (typ. Coss.eff=95pF)
• 100% avalanche tested
• RoHS Compliant
D
GDS
TO-220
GDS TO-220F
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
ID Drain Current - Continuous (T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 11N60C2 |
Infineon |
Power Transistor | |
2 | 11N60C3 |
Infineon Technologies |
Power Transistor | |
3 | 11N60E |
Fuji Electric |
FMV11N60E | |
4 | 11N60K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
5 | 11N60M6 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | 11N60S5 |
Infineon Technologies AG |
SPP11N60S5 | |
7 | 11N65BS |
PINGWEI |
N-Channel MOSFET | |
8 | 11N65C3 |
Infineon Technologies |
SPP11N65C3 | |
9 | 11N65FS |
PINGWEI |
N-Channel MOSFET | |
10 | 11N65HS |
PINGWEI |
N-Channel MOSFET | |
11 | 11N65M2 |
STMicroelectronics |
N-Channel MOSFET | |
12 | 11N65M5 |
STMicroelectronics |
N-channel Power MOSFET |