11N06LT NXP Semiconductors PHB11N06LT Datasheet, en stock, prix

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11N06LT

NXP Semiconductors
11N06LT
11N06LT 11N06LT
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Part Number 11N06LT
Manufacturer NXP (https://www.nxp.com/) Semiconductors
Description N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc ...
Features
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics www.DataSheet4U.com
• High thermal cycling performance
• Low thermal resistance PHB11N06LT, PHD11N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 11 A g s RDS(ON) ≤ 150 mΩ (VGS = 5 V) RDS(ON) ≤ 130 mΩ (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching application...

Document Datasheet 11N06LT Data Sheet
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