Symbol VDS Drain-Source Voltage VDSX Characteristics 600 600 Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Stor.
Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Outline Drawings [mm] TO-220F(SLS) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Symbol VDS Drain-Source Voltage VDSX Characteristics 600 600 Continuous Drain Current Pulsed Drain Current.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 11N60 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | 11N60C2 |
Infineon |
Power Transistor | |
3 | 11N60C3 |
Infineon Technologies |
Power Transistor | |
4 | 11N60K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
5 | 11N60M6 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | 11N60S5 |
Infineon Technologies AG |
SPP11N60S5 | |
7 | 11N65BS |
PINGWEI |
N-Channel MOSFET | |
8 | 11N65C3 |
Infineon Technologies |
SPP11N65C3 | |
9 | 11N65FS |
PINGWEI |
N-Channel MOSFET | |
10 | 11N65HS |
PINGWEI |
N-Channel MOSFET | |
11 | 11N65M2 |
STMicroelectronics |
N-Channel MOSFET | |
12 | 11N65M5 |
STMicroelectronics |
N-channel Power MOSFET |