| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
IGBT 150 GT 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 2 8 6.5 3 3.7 V VGE = VCE, IC = 6 mA Collector- |
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Siemens Semiconductor Group |
IGBT plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 57 03.96 BSM 181 BSM 181 R Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteris |
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Siemens Semiconductor Group |
IGBT Vis - Semiconductor Group 1 Mar-29-1996 BSM 100 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 3.1 2.5 |
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Siemens Semiconductor Group |
IGBT plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 31 03.96 BSM 121 AR Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Dr |
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Siemens Semiconductor Group |
IGBT eristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 0.3 1.2 6.5 3 3.7 V VGE = VCE, IC = 0.6 mA Collector-emitter saturation voltage |
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Siemens Semiconductor Group |
IGBT otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 6.5 2.7 2.8 V VGE = VCE, IC = 0.4 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj |
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Siemens Semiconductor Group |
IGBT plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 57 03.96 BSM 181 BSM 181 R Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteris |
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Siemens Semiconductor Group |
IGBT ristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 1.5 6 6.5 3 3.7 V VGE = VCE, IC = 4 mA Collector-emitter saturation voltage VCE(s |
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Siemens Semiconductor Group |
IGBT B 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.8 5.5 3.4 4.5 0.8 3.2 6.2 3.9 5.3 V VGE = VCE, IC = 8 mA Collector |
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Siemens Semiconductor Group |
IGBT BSM 100 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 1.5 6 6.5 3 3.7 V VGE = VCE, IC = 4 mA Coll |
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Siemens Semiconductor Group |
IGBT climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 17 03.96 BSM 101 AR Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltag |
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Siemens Semiconductor Group |
IGBT mate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 24 03.96 BSM 111 AR Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage V |
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Siemens Semiconductor Group |
IGBT ard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 64 03.96 BSM 181 F Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown vol |
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Siemens Semiconductor Group |
IGBT 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 71 03.96 BSM 191 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, |
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Siemens Semiconductor Group |
IGBT to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 78 03.96 BSM 191 F Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source break |
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Siemens Semiconductor Group |
IGBT at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 1 4.5 6.5 3 3.7 V VGE = VCE, IC = 3 mA Collector-emitter saturation voltage VCE(sat) - VG |
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Siemens Semiconductor Group |
IGBT DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.8 5.5 3.4 4.6 0.5 2 6.2 3.9 5.3 V VGE = VCE, IC = 5 mA Collector-emitte |
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Siemens Semiconductor Group |
IGBT 75 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) VCE(sat) 2.5 3.1 1 4 3 3.7 V VGE = VCE, IC = 2 mA Collector-emi |
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Siemens Semiconductor Group |
IGBT ics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 1.5 6 6.5 3 3.7 V VGE = VCE, IC = 4 mA Collector-emitter saturation voltage VCE(sat) |
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Siemens Semiconductor Group |
IGBT 6 BSM 100 GT 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) VCE(sat) 2.5 3.1 1.5 6 3 3.7 V VGE = VCE, IC = 4 mA Coll |
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