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BSM191 |
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| Part Number | BSM191 |
| Manufacturer | Siemens Semiconductor Group |
| Description | SIMOPAC® Module BSM 191 VDS = 1000 V ID = 28 A R DS(on) = 0.37 Ω q q q q q q Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit... |
| Features |
23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
71
03.96
BSM 191
Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VDS = 1000 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 18 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max., ID = 18 A Input capacitance VGS = 0... |
| Document |
 BSM191 Data Sheet
PDF 223.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSM191F |
Siemens Semiconductor Group |
IGBT |
|
| 2 | BSM100GAL120DN2 |
Siemens Semiconductor Group |
IGBT |
|
| 3 | BSM100GB120DN2 |
Siemens Semiconductor Group |
IGBT |
|
| 4 | BSM100GB120DN2K |
Siemens Semiconductor Group |
IGBT |
|
| 5 | BSM100GB170DN2 |
Siemens Semiconductor Group |
IGBT |
|