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BSM150GT120DN2 |
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| Part Number | BSM150GT120DN2 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSM 150 GT 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 150 GT 120 ... |
| Features |
150 GT 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 2 8 6.5 3 3.7
V
VGE = VCE, IC = 6 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 150 A, Tj = 25 °C VGE = 15 V, IC = 150 A, Tj = 125 °C
Zero gate voltage collector current
ICES
2.8 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
320
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
62 10 ... |
| Document |
 BSM150GT120DN2 Data Sheet
PDF 182.01KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSM150GAL120DN2 |
Siemens Semiconductor Group |
IGBT |
|
| 2 | BSM150GAL120DN2E3166 |
Siemens Semiconductor Group |
IGBT |
|
| 3 | BSM150GB120DLC |
eupec GmbH |
IGBT |
|
| 4 | BSM150GB120DN2 |
Siemens Semiconductor Group |
IGBT |
|
| 5 | BSM150GB120DN2E3166 |
Siemens Semiconductor Group |
IGBT |
|