BSM75GD120DN2 |
Part Number | BSM75GD120DN2 |
Manufacturer | Siemens Semiconductor Group |
Description | BSM 75 GD 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 75 GD 120 DN... |
Features |
75 GD 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th) VCE(sat)
2.5 3.1 1 4 3 3.7
V
VGE = VCE, IC = 2 mA
Collector-emitter saturation voltage
VGE = 15 V, IC = 75 A, Tj = 25 °C VGE = 15 V, IC = 75 A, Tj = 125 °C
Zero gate voltage collector current
ICES
1.5 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
320
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
31 5.1 0.72 0.38 -
S n... |
Document |
BSM75GD120DN2 Data Sheet
PDF 185.90KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM75GD120DLC |
Eupec |
IGBT Module | |
2 | BSM75GD60DLC |
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3 | BSM75GAL120DN2 |
Siemens Semiconductor Group |
IGBT | |
4 | BSM75GB120DLC |
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5 | BSM75GB120DN2 |
Siemens Semiconductor Group |
IGBT |