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BSM100GB170DN2 |
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| Part Number | BSM100GB170DN2 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSM 100 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 15 Ohm Type BSM 100 GB 170 DN2 Maximu... |
| Features |
B 170 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.8 5.5 3.4 4.5 0.8 3.2 6.2 3.9 5.3
V
VGE = VCE, IC = 8 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 100 A, Tj = 25 °C VGE = 15 V, IC = 100 A, Tj = 125 °C
Zero gate voltage collector current
ICES
1 -
mA
VCE = 1700 V, VGE = 0 V, Tj = 25 °C VCE = 1700 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
320
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
36 16 1... |
| Document |
 BSM100GB170DN2 Data Sheet
PDF 130.95KB |
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