BSM75GB170DN2 |
Part Number | BSM75GB170DN2 |
Manufacturer | Siemens Semiconductor Group |
Description | BSM 75 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 22 Ohm Type BSM 75 GB 170 DN2 Maximum ... |
Features |
DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.8 5.5 3.4 4.6 0.5 2 6.2 3.9 5.3
V
VGE = VCE, IC = 5 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 75 A, Tj = 25 °C VGE = 15 V, IC = 75 A, Tj = 125 °C
Zero gate voltage collector current
ICES
0.75 -
mA
VCE = 1700 V, VGE = 0 V, Tj = 25 °C VCE = 1700 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
400
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
27 11 1 0.28 ... |
Document |
BSM75GB170DN2 Data Sheet
PDF 113.21KB |
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