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BSM121AR |
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| Part Number | BSM121AR |
| Manufacturer | Siemens Semiconductor Group |
| Description | SIMOPAC® Module BSM 121 AR VDS = 200 V ID = 130 A R DS(on) = 20 mΩ q q q q q q Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circu... |
| Features |
plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
31
03.96
BSM 121 AR
Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VDS = 200 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 80 A Dynamic Characteristics Forward transconductance Values typ. max. Unit
V(BR... |
| Document |
 BSM121AR Data Sheet
PDF 207.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSM120C12P2C201 |
ROHM |
SiC |
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| 2 | BSM120D12P2C005 |
ROHM |
SiC |
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| 3 | BSM100GAL120DN2 |
Siemens Semiconductor Group |
IGBT |
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| 4 | BSM100GB120DN2 |
Siemens Semiconductor Group |
IGBT |
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| 5 | BSM100GB120DN2K |
Siemens Semiconductor Group |
IGBT |
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