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BSM111AR |
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| Part Number | BSM111AR |
| Manufacturer | Siemens Semiconductor Group |
| Description | SIMOPAC® Module BSM 111 AR VDS = 100 V ID = 200 A R DS(on) = 8.5 mΩ q q q q q q Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circ... |
| Features |
mate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
24
03.96
BSM 111 AR
Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VDS = VGS, ID = 1 mA Zero gate voltage drain current VDS = 100 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 130 A Dynamic Characteristics Forward transconductance Values typ. max. Unit
V(BR)DSS
100 – 3.0 – 4.0 V VGS(... |
| Document |
 BSM111AR Data Sheet
PDF 216.55KB |
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