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Fairchild Semiconductor |
Integrated Load Switch Max rDS(on) = 0.5 Ω at VGS = 4.5 V, ID = –0.83 A Max rDS(on) = 0.7 Ω at VGS = 2.5 V, ID = –0.70 A Max rDS(on) = 1.2 Ω at VGS = 1.8 V, ID = –0.43 A Max rDS(on) = 1.8 Ω at VGS = 1.5 V, ID = –0.36 A Control MOSFET (Q1) includes Zener protectio |
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Fairchild Semiconductor |
Single P-Channel Specified PowerTrench MOSFET • – 350 mA, – 20 V RDS(ON) = 1.2 Ω @ VGS = – 4.5 V RDS(ON) = 1.6 Ω @ VGS = – 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 1 S G D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25oC unless o |
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Fairchild Semiconductor |
Dual P-Channel Specified PowerTrench MOSFET • – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.5 V RDS(ON) = 12Ω @ VGS = – 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 6 5 4 S1 G1 1 2 3 6 5 4 D1 G2 S2 1 2 D2 3 TA=25oC unless otherwise noted A |
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Fairchild Semiconductor |
Single N-Channel Specified PowerTrench MOSFET • 600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 1 S G G 1 3 S 2 D D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25 C |
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Fairchild Semiconductor |
MOSFET General Description Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID = –0.36 A HBM ESD protection |
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Fairchild Semiconductor |
Dual P-Channel Specified PowerTrenchR MOSFET • – 350 mA, – 20 V RDS(ON) = 1.2 Ω @ VGS = – 4.5 V RDS(ON) = 1.6 Ω @ VGS = – 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 6 5 4 S1 G1 1 2 3 6 5 4 D1 G2 S2 1 2 D2 3 TA=25oC unless otherwise note |
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Fairchild Semiconductor |
Dual N-Channel Specified PowerTrench MOSFET • 600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 6 5 4 1 2 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25 C unless oth |
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Fairchild Semiconductor |
Dual N-Channel Specified PowerTrench MOSFET • 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V RDS(ON) = 7 Ω @ VGS = 2.5 V • ESD protection diode (note 3) • RoHS Compliant Applications • Li-Ion Battery Pack 6 5 4 S1 G1 1 2 3 6 5 4 D1 G2 S2 1 2 D2 3 TA=25oC unless otherwise noted Absolute |
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Fairchild Semiconductor |
Single N-Channel MOSFET This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. IGN Applications ES • Li-Ion Battery Pack • 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V RDS(ON) = 7 Ω @ |
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Fairchild Semiconductor |
Complementary N & P-Channel PowerTrench MOSFET Q1: N-Channel Max rDS(on) = 0.7Ω at VGS = 4.5V, ID = 600mA Max rDS(on) = 0.85Ω at VGS = 2.5V, ID = 500mA Max rDS(on) = 1.25Ω at VGS = 1.8V, ID =150 mA Q2: P-Channel Level shifting Power Supply Converter Circuits Load/Power Switching Cell |
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Fairchild Semiconductor |
Complementary N & P-Channel PowerTrench MOSFET Q1: N-Channel Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA Max rDS(on) = 9Ω at VGS = 1.8V, ID = 150mA Q2: P-Channel tm General Description This Complementary N & P-Channel MOSFET has been designed usin |
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Fairchild Semiconductor |
MOSFET General Description Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID = –0.36 A HBM ESD protection |
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Fairchild Semiconductor |
Single P-Channel MOSFET This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. IGN Applications ES • Li-Ion Battery Pack • – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.5 V RDS(ON) |
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Fairchild Semiconductor |
Single N-Channel 2.5V Specified PowerTrench MOSFET This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V. IGN Applications ES • Li-Ion Battery Pack • 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 500 |
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ON Semiconductor |
Dual P-Channel MOSFET • Max rDS(on) = 0.5 W at VGS = –4.5 V, ID = –0.83 A • Max rDS(on) = 0.7 W at VGS = –2.5 V, ID = –0.70 A • Max rDS(on) = 1.2 W at VGS = –1.8 V, ID = –0.43 A • Max rDS(on) = 1.8 W at VGS = –1.5 V, ID = –0.36 A • HBM ESD Protection Level = 1400 V (Note |
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