| No. | Partie # | Fabricant | Description | Fiche Technique |
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SHANGHAI BELLING |
1024 segment low voltage and low noise BBD p=100kHz 1024 BBD 2.5 % 0.25 mVrms 73 dB BL3207 fcp BL3207 ( (Hz) 1024 BBD td td = 1024 fcp R,C BL3102 ) (3) 1) (LPF), LPF LPF 2) DC / .3. 4 BL3207 1024 4 3 2 1 0246 BBD 10k 100k BL3207 100k 100k Rs 5.6k VDD In Low Pass Filter |
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GME |
N-Channel Power Mosfet Electrostatic Sensitive Devices. VDS (V) = 30V ID = 5.7A（VGS = 10V） RDS(ON) < 26.5mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) Pb Lead-free APPLICATIONS N-channel enhancement mode effect transistor. Switching a |
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GME |
P-Channel High Density Trench MOSDET z Super high dense cell trench design for low RDS(ON). z Rugged and Reliable. Pb Lead-free APPLICATIONS z P-channel enhancement mode effect transistor. z Switching application. Production specification BL3401 ORDERING INFORMATION Type No. Marki |
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GME |
P-Channel MOSDET Super high dense cell trench design for low RDS(ON). Rugged and Reliable. Electrostatic Sensitive Devices. Pb Lead-free APPLICATIONS P-channel enhancement mode effect transistor. Switching application. Production specification BL3401 OR |
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GME |
N-Channel Power Mosfet RDS(ON) =3.8Ω@ VGS = 10V Ultra low gate charge ( typical 10 nC ) Pb Lead-free Low reverse transfer Capacitance ( CRSS = typical 5.5 pF ) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness |
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GME |
N-Channel Power Mosfet Electrostatic Sensitive Devices. VDS (V) = 30V ID = 5.8A RDS(ON) < 25mΩ (VGS = 10V) RDS(ON) < 35mΩ (VGS = 4.5V) Pb Lead-free BL3404 APPLICATIONS N-channel enhancement mode effect transistor. Switching application. ORDERING INFORMATION |
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GME |
P-Channel Power Mosfet Electrostatic Sensitive Devices. VDS (V) = - 30V ID = - 4.1 RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) Pb Lead-free APPLICATIONS P-channel enhancement mode effect transistor. Switching application. ORDERING INFORMATION T |
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GME |
P-Channel Power Mosfet Electrostatic Sensitive Devices. VDS (V) =- 20V ID = -3.5 A(VGS = -4.5V) RDS(ON) < 70mΩ (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) RDS(ON) < 130mΩ (VGS = -1.5V) Pb Lead-free APPLICATIONS P-channel enhancement |
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GME |
N-Channel Power Mosfet VDS = 600V , ID = 3A RDS(ON) =3.6Ω@ VGS = 10V Ultra low gate charge ( typical 10 nC ) Pb Lead-free Ultra low gate charge ( typical 10 nC ) Fast switching capability Avalanche energy specified Improved dv/dt capability, high rugged |
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GME |
N-Channel Power Mosfet RDS(ON) =3.8Ω@ VGS = 10V Ultra low gate charge ( typical 19 nC ) Pb Lead-free Low reverse transfer Capacitance ( CRSS = typical 11 pF ) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness |
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SHANGHAI BELLING |
2048 segment low voltage and low noise BBD =0.36Vrms 3dB (fi=1kHz, 0dB) Vi fcp=40kHz,fi=1kHz,THD=2.5% Li fcp=40kHz,fi=1kHz, Vi=0.36Vrms THD fcp=40kHz,fi=1kHz, Vi=0.25Vrms Vno fcp=100kHz S/N fcp=100kHz 10.24 10 -4 0.36 71 102.4 ms kHz 4 2.5 0.25 Vrms dB % mVrms dB BL3208 fcp |
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GME |
Bridge Rectifiers Planar passivated chips Ultra low leakage reverse current High temperature performance High surge current capability Ideal for printed circuit boards High temperature soldering guaranteed:260°C/10 seconds RoHS Compliant Mechanical Data |
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GME |
Bridge Rectifiers Planar passivated chips Ultra low leakage reverse current High temperature performance High surge current capability Ideal for printed circuit boards High temperature soldering guaranteed:260°C/10 seconds RoHS Compliant Mechanical Data |
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GME |
N-Channel Power Mosfet Electrostatic Sensitive Devices. VDS (V) = 30V ID = 4 A RDS(ON) < 55mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 110mΩ (VGS = 2.5V) Pb Lead-free APPLICATIONS N-channel enhancement mode effect transistor. Switching application. |
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GME |
Dual P-Channel Power Mosfet Electrostatic Sensitive Devices. VDS (V) = -20V ID =-4 A RDS(ON) < 50mΩ (VGS = -4.5V) RDS(ON) < 70mΩ (VGS = -2.5V) RDS(ON) < 100mΩ (VGS = -1.8V) Pb Lead-free APPLICATIONS P-channel enhancement mode effect transistor. Switching applicati |
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GME |
N-Channel Power Mosfet VDS=100V ID = 36A @VGS = 10V RDS(ON) < 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V . APPLICATIONS N-Channel Power MOSFET. Switching Applications. Production specification BL36N10 TO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symb |
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