BL3401L |
Part Number | BL3401L |
Manufacturer | GME |
Description | P-Channel High Density Trench MOSDET FEATURES Super high dense cell trench design for low RDS(ON). Rugged and Reliable. Electrostatic Sensitive Devices. Pb Lead-free APPLICATIONS P-channel ... |
Features |
Super high dense cell trench design for low RDS(ON). Rugged and Reliable. Electrostatic Sensitive Devices. Pb Lead-free APPLICATIONS P-channel enhancement mode effect transistor. Switching application. Production specification BL3401 ORDERING INFORMATION Type No. Marking BL3401 3401 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM IS Gate -Source voltage Drain Current-Continuous a -Pulseb @ TA = 25 ℃ Drain-Source Diode Forward Current a PD Power Dissipation RθJA Thermal resistance... |
Document |
BL3401L Data Sheet
PDF 344.06KB |
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