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BL3N80 |
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| Part Number | BL3N80 |
| Manufacturer | GME |
| Description | 2.5A,800V N-Channel Power Mosfet FEATURES RDS(ON) =3.8Ω@ VGS = 10V Ultra low gate charge ( typical 19 nC ) Pb Lead-free Low reverse transfer Capacitance ( CRSS = typical 11 pF ) Fast swit... |
| Features |
RDS(ON) =3.8Ω@ VGS = 10V Ultra low gate charge ( typical 19 nC ) Pb Lead-free Low reverse transfer Capacitance ( CRSS = typical 11 pF ) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness Production specification BL3N80 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Peak Diode Recovery dv/dt Power Dissipation Thermal resistance,Junction-to-Am... |
| Document |
 BL3N80 Data Sheet
PDF 311.40KB |
| Distributor | Stock | Price | Buy |
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