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BL3400 |
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| Part Number | BL3400 |
| Manufacturer | GME |
| Description | Production specification N-Channel Enhancement Mode Field Effect Transistor BL3400 FEATURES Electrostatic Sensitive Devices. VDS (V) = 30V ID = 5.7A（VGS = 10V） RDS(ON) < 26.5mΩ (VGS = 10V) R... |
| Features |
Electrostatic Sensitive Devices. VDS (V) = 30V ID = 5.7A（VGS = 10V） RDS(ON) < 26.5mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) Pb Lead-free APPLICATIONS N-channel enhancement mode effect transistor. Switching application. ORDERING INFORMATION Type No. Marking BL3400 3400 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 30 VGSS ID IDM PD RθJA Gate -Source voltage Continuous Drain CurrentA Pulsed Drain Current a ±12 @ TA = 25 ℃ 5.7 @ TA = 70 ℃ 4.7 25 Power Dissip... |
| Document |
 BL3400 Data Sheet
PDF 334.67KB |
| Distributor | Stock | Price | Buy |
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