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BL3415 |
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| Part Number | BL3415 |
| Manufacturer | GME |
| Description | Production specification Dual P-Channel Enhancement Mode Field Effect Transistor BL3415 FEATURES Electrostatic Sensitive Devices. VDS (V) = -20V ID =-4 A RDS(ON) < 50mΩ (VGS = -4.5V) RDS(ON)... |
| Features |
Electrostatic Sensitive Devices. VDS (V) = -20V ID =-4 A RDS(ON) < 50mΩ (VGS = -4.5V) RDS(ON) < 70mΩ (VGS = -2.5V) RDS(ON) < 100mΩ (VGS = -1.8V) Pb Lead-free APPLICATIONS P-channel enhancement mode effect transistor. Switching application. ORDERING INFORMATION Type No. Marking BL3415 3415 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS VGSS ID IDM Drain-Source voltage Gate -Source voltage Continuous Drain CurrentA Pulsed Drain Current a @ TA = 25 ℃ @ TA = 70 ℃ PD Power Dissipation @ TA = 25 ℃ @ TA = 70 ℃ RθJA Ther... |
| Document |
 BL3415 Data Sheet
PDF 401.93KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BL34118 |
SHANGHAI BELLING |
Voice Switched Speakerphone Circuit |
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| 2 | BL34119 |
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| 3 | BL3400 |
GME |
N-Channel Power Mosfet |
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| 4 | BL3401 |
GME |
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| 5 | BL34018 |
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