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BL3407 |
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| Part Number | BL3407 |
| Manufacturer | GME |
| Description | Production specification P-Channel Enhancement Mode Field Effect Transistor BL3407 FEATURES Electrostatic Sensitive Devices. VDS (V) = - 30V ID = - 4.1 RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < ... |
| Features |
Electrostatic Sensitive Devices. VDS (V) = - 30V ID = - 4.1 RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) Pb Lead-free APPLICATIONS P-channel enhancement mode effect transistor. Switching application. ORDERING INFORMATION Type No. Marking BL3407 3407 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage -30 VGSS ID IDM PD RθJA Gate -Source voltage ±20 Continuous Drain CurrentA @ TA = 25 ℃ @ TA = 70 ℃ Pulsed Drain Current a Power Dissipation @ TA = 25 ℃ @ TA = 70 ℃ Thermal res... |
| Document |
 BL3407 Data Sheet
PDF 298.20KB |
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