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BL3N65 |
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| Part Number | BL3N65 |
| Manufacturer | GME |
| Description | 3A,650V N-Channel Power Mosfet FEATURES RDS(ON) =3.8Ω@ VGS = 10V Ultra low gate charge ( typical 10 nC ) Pb Lead-free Low reverse transfer Capacitance ( CRSS = typical 5.5 pF ) Fast switc... |
| Features |
RDS(ON) =3.8Ω@ VGS = 10V Ultra low gate charge ( typical 10 nC ) Pb Lead-free Low reverse transfer Capacitance ( CRSS = typical 5.5 pF ) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness Production specification BL3N65 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS EAR dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt Power Dissipation Thermal resistanc... |
| Document |
 BL3N65 Data Sheet
PDF 478.77KB |
| Distributor | Stock | Price | Buy |
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