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BL3435 |
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| Part Number | BL3435 |
| Manufacturer | GME |
| Description | Production specification P-Channel Enhancement Mode Field Effect Transistor BL3435 FEATURES Electrostatic Sensitive Devices. VDS (V) =- 20V ID = -3.5 A(VGS = -4.5V) RDS(ON) < 70mΩ (VGS = -4.... |
| Features |
Electrostatic Sensitive Devices. VDS (V) =- 20V ID = -3.5 A(VGS = -4.5V) RDS(ON) < 70mΩ (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) RDS(ON) < 130mΩ (VGS = -1.5V) Pb Lead-free APPLICATIONS P-channel enhancement mode effect transistor. Switching application. SOT-23 ORDERING INFORMATION Type No. Marking BL3435 3435 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage -20 VGSS ID IDM PD RθJA Gate -Source voltage ±8 Continuous Drain CurrentA @ TA = 25 ℃ @ TA = 70 ℃ Pulse... |
| Document |
 BL3435 Data Sheet
PDF 599.54KB |
| Distributor | Stock | Price | Buy |
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