| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D G S D-PAK FQD Series I-PAK G D S FQU Series G S Absolute Max |
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Fairchild Semiconductor |
FQA12P20 • • • • • • -12.6A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! ● ● G! ▶ ▲ ● G DS TO-3P FQA Series ! D Absolute Maximum Rati |
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Fairchild Semiconductor |
Triple 3-Input NAND Gate |
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Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench MOSFET • -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V. • • Low gate charge (3.3 nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applicati |
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Fairchild Semiconductor |
200V P-Channel MOSFET • • • • • • -12.6A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! ● ● G! ▶ ▲ ● G DS TO-3P FQA Series ! D Absolute Maximum Rati |
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Fairchild Semiconductor |
100V P-Channel MOSFET • -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V • Low gate charge ( typical 21 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant tm DD G S D-PAK Absolute Max |
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Fairchild Semiconductor |
Dual P-Channel MOSFET • –2.3 A, –20 V. RDS(ON) = 115 mΩ @ VGS = –4.5 V RDS(ON) = 155 mΩ @ VGS = –2.5 V RDS(ON) = 225 mΩ @ VGS = –1.8 V • High performance trench technology for extremely low RDS(ON) • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); |
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Fairchild Semiconductor |
200V P-Channel MOSFET • • • • • • -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! ● ● G! ▶ ▲ ● G D S TO-3PF FQAF Series ! D Absolute Maximum R |
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Fairchild Semiconductor |
200V P-Channel MOSFET • • • • • • -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! ● ● G! G S ▶ ▲ ● D2-PAK FQB Series G D S I2-PAK FQI Series |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D G S D-PAK FQD Series I-PAK G D S FQU Series G S Absolute Max |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • • -11.5A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G G DS TO-220 FQP Serie |
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Fairchild Semiconductor |
200V P-Channel MOSFET )** && ' / )/ .8 ±3* + ( ( ( + < ( < +$ > >$7 7 7 9 + (! : (! ,!(! : = , !!$ |
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Fairchild Semiconductor |
MOSFET General Description Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used su |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • • -11.5A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK FQB Ser |
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Fairchild Semiconductor |
200V P-Channel MOSFET • • • • • • -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! ● ● G! G S ▶ ▲ ● D2-PAK FQB Series G D S I2-PAK FQI Series |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • • -8.2A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G GD S TO-220F FQPF Seri |
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Fairchild Semiconductor |
200V P-Channel MOSFET • • • • • • -7.3A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! ● ● G! ▶ ▲ ● GD S TO-220F FQPF Series ! D Absolute Maximum Ra |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • • -11.5A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK FQB Ser |
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