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FDMC612PZ |
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| Part Number | FDMC612PZ |
| Manufacturer | Fairchild Semiconductor |
| Description | Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A High performance trench technology for extremely low rDS(on) High power and current handling c... |
| Features |
General Description
Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
Termination is Lead-free and RoHS Compliant
HBM ESD capability level > 3.6 KV typical (Note 4)
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Applications
Battery Management Load Switch
8765
DD D... |
| Document |
 FDMC612PZ Data Sheet
PDF 285.87KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMC610P |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDMC610P |
ON Semiconductor |
P-Channel MOSFET |
|
| 3 | FDMC6296 |
Fairchild Semiconductor |
Single N-Channel Logic-Level Power Trench MOSFET |
|
| 4 | FDMC6675BZ |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDMC6675BZ |
ON Semiconductor |
P-Channel MOSFET |
|