FQP12P10 |
Part Number | FQP12P10 |
Manufacturer | Fairchild Semiconductor |
Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • • -11.5A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G G DS TO-220 FQP Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP12P10 -100 -11.5 -8.1 -46 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/n... |
Document |
FQP12P10 Data Sheet
PDF 550.92KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQP12P20 |
Fairchild Semiconductor |
200V P-Channel MOSFET | |
2 | FQP12N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
3 | FQP12N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
4 | FQP12N50 |
Oucan Semi |
12A N-Channel MOSFET | |
5 | FQP12N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |