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FDC6312P |
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| Part Number | FDC6312P |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low ... |
| Features |
• –2.3 A, –20 V. RDS(ON) = 115 mΩ @ VGS = –4.5 V RDS(ON) = 155 mΩ @ VGS = –2.5 V RDS(ON) = 225 mΩ @ VGS = –1.8 V • High performance trench technology for extremely low RDS(ON) • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick) Applications • Power management • Load switch D2 S1 D1 4 5 G2 3 2 1 SuperSOT TM -6 S2 G1 TA=25oC unless otherwise noted 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings –20 ±8 (Note 1a) Units V V A W –2.3 –7 0.96 0.9... |
| Document |
 FDC6312P Data Sheet
PDF 88.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDC6310P |
Fairchild Semiconductor |
Dual P-Channel 2.5V Specified PowerTrench MOSFET |
|
| 2 | FDC6310P |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 3 | FDC6318P |
Fairchild Semiconductor |
Dual P-Channel 1.8V PowerTrench Specified MOSFET |
|
| 4 | FDC6301N |
Fairchild Semiconductor |
Dual N-Channel / Digital FET |
|
| 5 | FDC6301N |
ON Semiconductor |
Dual N-Channel Digital FET |
|