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FQAF12P20 |
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| Part Number | FQAF12P20 |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! ● ● G! ▶ ▲ ● G D S TO-3PF FQAF Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQAF12P20 -200 -8.6 -5.4 -34.4 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-S... |
| Document |
 FQAF12P20 Data Sheet
PDF 615.02KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQAF12N60 |
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600V N-Channel MOSFET |
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| 2 | FQAF10N80 |
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| 3 | FQAF11N40 |
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400V N-Channel MOSFET |
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| 4 | FQAF11N90 |
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| 5 | FQAF11N90C |
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MOSFET |
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