FQD12P10TM_F085 |
Part Number | FQD12P10TM_F085 |
Manufacturer | Fairchild Semiconductor |
Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V • Low gate charge ( typical 21 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant tm DD G S D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanch... |
Document |
FQD12P10TM_F085 Data Sheet
PDF 861.43KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQD12P10TM-F085 |
ON Semiconductor |
P-Channel MOSFET | |
2 | FQD12P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET | |
3 | FQD12N06 |
Oucan Semi |
60V N-Channel MOSFET | |
4 | FQD12N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
5 | FQD12N20L |
ON Semiconductor |
N-Channel MOSFET |