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FQI12P10 |
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| Part Number | FQI12P10 |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • • -11.5A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK FQB Series G D S I2-PAK FQI Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB12P10 / FQI12P10 -100 -11.5 -8.1 -46 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) ... |
| Document |
 FQI12P10 Data Sheet
PDF 635.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQI12P20 |
Fairchild Semiconductor |
200V P-Channel MOSFET |
|
| 2 | FQI12N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 3 | FQI12N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 4 | FQI12N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 5 | FQI10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|