Advanced Power Technology MS1 fiche technique

No.	Partie #	Fabricant	Description
1	MS1406	Advanced Power Technology	RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS • • • • • • 175MHz 12.5 VOLTS GOLD METALIZATION Pout = 20WATTS Gp = 8.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1406 is a silicon NPN transistor designed for 12.5V AM Class C amplifiers operating in the 118 –136 MHz aviation band a
2	MS1401	Advanced Power Technology	RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS • • • • • 150 MHz 7.5 Volts Common Emitter POUT = 2.5 W Min. GP = 11.0 dB Gain DESCRIPTION: The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operat
3	MS1006	Advanced Power Technology	RF AND MICROWAVE TRANSISTORS • • • • • • • Optimized for SSB 30 MHz 50 Volts Common Emitter Gold Metallization POUT = 75 W Min. GP = 14 dB Gain DESCRIPTION: The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications.
4	MS1051	Advanced Power Technology	RF & MICROWAVE TRANSISTORS • • • • • • • 30 MHz 12.5 VOLTS POUT = 100 WATTS GPE = 12.0 dB MINIMUM IMD = –30 dBc GOLD METALLIZATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF commun
5	MS1329	Advanced Power Technology	RF & MICROWAVE TRANSISTORS • 150 MHz • 28 VOLTS • POUT = 60W • GP = 7.0 dB MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118 – 136 MHz and 28 V Class
6	MS1455	Advanced Power Technology	RF & MICROWAVE TRANSISTORS • 836 MHz • 12.5 VOLTS • POUT = 45 WATTS • GP = 4.7 dB MINIMUM • COMMON BASE CONFIGURATION DESCRIPTION: The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Int
7	MS1453	Advanced Power Technology	RF & MICROWAVE TRANSISTORS • 800-900 MHz • 24 VOLTS • COMMON EMITTER • GOLD METALIZATION • INTERNAL INPUT MATCHING • CLASS AB LINEAR OPERATION • POUT = 30 W MIN. WITH 7.5 dB GAIN MS1453 DESCRIPTION: The MS1453 is a gold metallized epitaxial silicon NPN planar transistor usin
8	MS1281	Advanced Power Technology	RF & Microwave Transistors FM Broadcast Applications • • • • • • 108 MHz 28 VOLTS GOLD METALLIZATION POUT = 150 WATTS GP = 9.2dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1281 is a 28V silicon NPN planar transistor designed primarily for VHF FM broadcast transmitters. Diffused emitter ba
9	MS1408	Advanced Power Technology	RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS • • • • • • • FM CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 20W POWER GAIN 8.2dB EFFICIENCY 55% COMMON EMITTER DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor designed for 108-152MHz AM class C and FM comm
10	MS1251	Advanced Power Technology	RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS • • • • • • • 175 MHz 12.5 VOLTS POUT = 45 WATTS GP = 6.5 dB MINIMUM INPUT MATCHED COMMON EMITTER CONFIGURATION VSWR = 20:1 DESCRIPTION: The MS1251 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 V, Class C VHF communicatio
11	MS1253	Advanced Power Technology	RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS • • • • • 50 MHz 12.5 VOLTS POUT = 70 WATTS Gp = 10 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION : The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utiliz
12	MS1000	Advanced Power Technology	RF & MICROWAVE TRANSISTORS • • • • • • • 30 MHz 28 VOLTS IMD = -30 dB GOLD METALLIZATION POUT = 125 WATTS GP = 15dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications. Diffused
13	MS1001	Advanced Power Technology	RF & MICROWAVE TRANSISTORS • • • • • • • 30 MHz 12.5 VOLTS IMD = -32 dBc INFINITE VSWR CAPABILITY @ RATED CONDITIONS POUT = 75 WATTS GP = 13dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF comm
14	MS1003	Advanced Power Technology	RF & MICROWAVE TRANSISTORS • • • • • 175 MHz 12.5 VOLTS POUT = 100 WATTS GP = 6.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for VHF, FM communications. Diffused emitter resistors pro
15	MS1007	Advanced Power Technology	RF & MICROWAVE TRANSISTORS • • • • • 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to
16	MS1227	Advanced Power Technology	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • • • • • • 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ba
17	MS1451	Advanced Power Technology	RF & MICROWAVE TRANSISTORS • 800-960 MHz • 24 VOLTS • CLASS AB LINEAR OPERATION • POUT = 15 WATTS • GP = 8.0 dB MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1451 is a gold metallized silicon NPN planar transistor designed for high linearity Class AB operation in c
18	MS1454	Advanced Power Technology	RF & MICROWAVE TRANSISTORS • Gold Metallization • Diffused Emitter Ballasting • Internal Input Matching • Designed for Linear Operation • High Saturated Power Capability • Common Emitter Configuration • POUT • Gain 30 W MIN 7.5 dB • Efficiency 55% (Typ) • 20:1 VSWR
19	MS1452	Advanced Power Technology	RF & MICROWAVE TRANSISTORS • 800-900 MHz • 24 VOLTS • COMMON EMITTER • GOLD METALLIZATION • INTERNAL INPUT MATCHING • CLASS AB LINEAR OPERATION • POUT = 30 W MINIMUM • GP = 7.5 dB DESCRIPTION: The MS1452 is a gold metallized epitaxial silicon NPN planar transistor using diffus
20	MS1579	Advanced Power Technology	RF & Microwave Transistors TV Linear Applications • • • • • • • 470 - 860 MHz 25 VOLTS CLASS A OPERATION INTERNAL INPUT MATCHING POUT = 14 WATTS GP = 8.5 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1579 is a gold metallized, epitaxial silicon NPN transistor designed for Class A, UHF