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MS1455 |
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| Part Number | MS1455 |
| Manufacturer | Advanced Power Technology |
| Description | The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and eff... |
| Features |
• 836 MHz • 12.5 VOLTS • POUT = 45 WATTS • GP = 4.7 dB MINIMUM • COMMON BASE CONFIGURATION DESCRIPTION: The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and efficiency across the entire frequency band. Gold metalization and emitter ballast resistors assures infinite VSWR capability and long term reliability. MS1455 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector-Base Voltage VEBO Emitter-Base Voltage VCEO Collector-Emit... |
| Document |
 MS1455 Data Sheet
PDF 130.26KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MS1451 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
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| 2 | MS1451 |
TE |
piezoresistive silicon pressure sensor |
|
| 3 | MS1452 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 4 | MS1453 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 5 | MS1454 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
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