MS1329 Advanced Power Technology RF & MICROWAVE TRANSISTORS Datasheet, en stock, prix

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MS1329

Advanced Power Technology
MS1329
MS1329 MS1329
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Part Number MS1329
Manufacturer Advanced Power Technology
Description The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118 – 136 MHz and 28 V Class C ground station transmitters. Emitter ballast r...
Features
• 150 MHz
• 28 VOLTS
• POUT = 60W
• GP = 7.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118
  – 136 MHz and 28 V Class C ground station transmitters. Emitter ballast resistors and gold metalitzation provide optimum VSWR capability. MS1329 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector- Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage PDISS IC Power Dissipation Collector current TJ Junction Temperature TST...

Document Datasheet MS1329 Data Sheet
PDF 183.31KB
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