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MS1001 |
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| Part Number | MS1001 |
| Manufacturer | Advanced Power Technology |
| Description | The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF communications. Diffused emitter resistors provide infinite VSWR capability under rated operating conditions. ABSOLUTE ... |
| Features |
• • • • • • • 30 MHz 12.5 VOLTS IMD = -32 dBc INFINITE VSWR CAPABILITY @ RATED CONDITIONS POUT = 75 WATTS GP = 13dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF communications. Diffused emitter resistors provide infinite VSWR capability under rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Total Dissipation Junction Temperature Storage Temperature Value 36 ... |
| Document |
 MS1001 Data Sheet
PDF 136.92KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MS1000 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 2 | MS1003 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIERS |
|
| 3 | MS1003 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 4 | MS1003SH |
Shindengen |
Quasi-Resonant Power Supply ICs |
|
| 5 | MS1004 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIERS |
|