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MS1253 |
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| Part Number | MS1253 |
| Manufacturer | Advanced Power Technology |
| Description | : The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely stable and capable ... |
| Features |
• • • • • 50 MHz 12.5 VOLTS POUT = 70 WATTS Gp = 10 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION : The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely stable and capable of withstanding high VSWR under operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO PDISS IC TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Device Current Junction Temperature Storage Temperature Val... |
| Document |
 MS1253 Data Sheet
PDF 139.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MS125 |
Diotec Semiconductor |
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| 2 | MS1251 |
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| 3 | MS1252 |
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| 4 | MS1257 |
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| 5 | MS120 |
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