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MS1452 |
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| Part Number | MS1452 |
| Manufacturer | Advanced Power Technology |
| Description | The MS1452 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station application. MS1452 A... |
| Features |
• 800-900 MHz • 24 VOLTS • COMMON EMITTER • GOLD METALLIZATION • INTERNAL INPUT MATCHING • CLASS AB LINEAR OPERATION • POUT = 30 W MINIMUM • GP = 7.5 dB DESCRIPTION: The MS1452 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station application. MS1452 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCES VEBO PDISS IC TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Device Current Junction Temperature TSTG Storage Temperature... |
| Document |
 MS1452 Data Sheet
PDF 137.20KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MS1451 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
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| 2 | MS1451 |
TE |
piezoresistive silicon pressure sensor |
|
| 3 | MS1453 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 4 | MS1454 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 5 | MS1455 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
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