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MS1454 |
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| Part Number | MS1454 |
| Manufacturer | Advanced Power Technology |
| Description | The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications. ABSOLUTE MAXIM... |
| Features |
• Gold Metallization • Diffused Emitter Ballasting • Internal Input Matching • Designed for Linear Operation • High Saturated Power Capability • Common Emitter Configuration • POUT • Gain 30 W MIN 7.5 dB • Efficiency 55% (Typ) • 20:1 VSWR • Overdrive Survivability 5 dB DESCRIPTION: The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltag... |
| Document |
 MS1454 Data Sheet
PDF 275.89KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MS1451 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
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| 2 | MS1451 |
TE |
piezoresistive silicon pressure sensor |
|
| 3 | MS1452 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 4 | MS1453 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 5 | MS1455 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
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