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MS1003 |
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| Part Number | MS1003 |
| Manufacturer | Advanced Power Technology |
| Description | The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability under rated operating conditions... |
| Features |
• • • • • 175 MHz 12.5 VOLTS POUT = 100 WATTS GP = 6.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability under rated operating conditions. Internal impedance matching ensures optimum power gain and efficiency over the 136-175 MHz band. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage... |
| Document |
 MS1003 Data Sheet
PDF 114.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MS1000 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 2 | MS1001 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 3 | MS1003 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIERS |
|
| 4 | MS1003SH |
Shindengen |
Quasi-Resonant Power Supply ICs |
|
| 5 | MS1004 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIERS |
|