| No. | Partie # | Fabricant | Description | Fiche Technique |
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Advanced Power Electronics |
AP4953GM ction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W Data and specifications subject to change without notice 1 200810075 www.DataSheet4U.com AP4953GM Electrical Characte |
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Advanced Power Electronics |
AP4957AGM 2191 Free Datasheet http://www.datasheet4u.net/ AP4957AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-25 |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2191 Free Datasheet http://www.datasheet4u.net/ AP4957AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-25 |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET ion-ambient3 Rating -60 ±20 -3.4 -2.7 -20 2 0.016 -55 to 150 -55 to 150 Value 62.5 Units V V A A A W W/℃ ℃ ℃ Unit ℃/W Data and specifications subject to change without notice 201108073-1/4 AP4951GM Electrical Characteristics@Tj=25oC(unless othe |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET rating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Max. Value 62.5 Unit ℃/W Data and specifications subject to change without notice 20020513 www.DataSheet4U.com AP4953GM Electrical Chara |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET ifications subject to change without notice 200303041 www.DataSheet4U.com AP4955GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=- |
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Advanced Power Electronics |
DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET 10V3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor -60 +20 -3.4 -2.7 -20 2 0.016 V V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj |
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Advanced Power Electronics |
DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET sed Drain Current1 Total Power Dissipation - 30 V +20 V -5 A -4 A - 20 A 2W Linear Derating Factor 0.016 W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a Parame |
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Advanced Power Electronics |
Dual P-channel Enhancement-mode Power MOSFETs Maximum Thermal Resistance, Junction-ambient3 Rating -60 ±20 -3.4 -2.7 -20 2 0.016 -55 to 150 -55 to 150 Value 62.5 Units V V A A A W W/°C °C °C Unit °C/W Ordering Information AP4951GM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tap |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET out notice 200922031 www.DataSheet4U.com AP4953D Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET re Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 20020513 www.DataSheet4U.com AP4953M Electrical Characteristics@Tj=25oC(unl |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET nge without notice 200303041 www.DataSheet4U.com AP4955M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -20 -0.5 Typ. - |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET ecifications subject to change without notice 200420041 www.DataSheet4U.com AP4957GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250u |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET hange without notice 200420041 www.DataSheet4U.com AP4957M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0. |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET ecifications subject to change without notice 200218051 www.DataSheet4U.com AP4959GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250u |
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Advanced Power Electronics |
DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET 5V3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor -20 +12 -5.6 -4.5 -20 2 0.016 V V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a |
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Advanced Power Electronics |
DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET @ 10V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range -30 +20 -7.4 -5.9 -30 2 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, J |
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Advanced Power Electronics |
DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET nt3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 -7.7 -6.1 -30 2 -55 to 150 -55 to 150 V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, |
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