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AP4957AGM |
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| Part Number | AP4957AGM |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolu... |
| Features |
2191
Free Datasheet http://www.datasheet4u.net/
AP4957AGM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-7A VGS=-4.5V, ID=-5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70oC)
Min. -30 -1 -
Typ. 7 16 2.8 9.3 9 6.5 40 26 190 185 5.3
Max. Units 26 36 -3 -1 -25 ±100 26 8 V mΩ mΩ V S uA uA nA nC nC ... |
| Document |
 AP4957AGM Data Sheet
PDF 197.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP4957AGM-HF |
Advanced Power Electronics |
DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP4957GM |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP4957GM-HF |
Advanced Power Electronics |
DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP4957M |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP4951GM |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|