AP4955GM |
Part Number | AP4955GM |
Manufacturer | Advanced Power Electronics |
Description | TThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absol... |
Features |
ifications subject to change without notice
200303041
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AP4955GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA
2
Min. -20 -0.5 -
Typ. -0.01
Max. Units 45 65 -1.2 -1 -25 ±100 30 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-5A VGS=-2.5V, ID=-4A
9 19 3 6 9 10 52 24 270 230
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off... |
Document |
AP4955GM Data Sheet
PDF 105.31KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AP4955GM-HF |
Advanced Power Electronics |
DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP4955M |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP4951GM |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP4951GM-HF |
Advanced Power Electronics |
DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP4951GM-HF-3 |
Advanced Power Electronics |
Dual P-channel Enhancement-mode Power MOSFETs |