AP4951GM-HF |
Part Number | AP4951GM-HF |
Manufacturer | Advanced Power Electronics |
Description | AP4951 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extr... |
Features |
10V3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
-60 +20 -3.4 -2.7 -20
2 0.016
V V A A A W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 62.5
Unit ℃/W
1 201501125
AP4951GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
∆BVDSS/∆Tj
RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(o... |
Document |
AP4951GM-HF Data Sheet
PDF 52.19KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AP4951GM-HF-3 |
Advanced Power Electronics |
Dual P-channel Enhancement-mode Power MOSFETs | |
2 | AP4951GM |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP4953D |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP4953GM |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP4953GM-HF |
Advanced Power Electronics |
DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET |